unisonic technologies co., ltd 13n40 preliminary power mosfet www.unisonic.com.tw 1 of 4 copyright ? 2011 unisonic technologies co., ltd qw-r502-687.a 13a, 400v n-channel power mosfet ? description the utc 13n40 is an n-channel mode power mosfet using utc? s advanced technology to provide customers with planar stripe and dmos technology. this technology specializes in allowing a minimum on-state resistance and supe rior switching performance. it also can withstand high energy pulse in the avalanche and commutation mode. the utc 13n40 is universally applied in electronic lamp ballast based on half bridge topology and high efficient switched mode power supply. ? features * r ds(on) =0.35 ? @ v gs =10v * high switching speed * 100% avalanche tested ? symbol 1.gate 3.source 2.drain ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 13N40L-TF3-T 13n40g-tf3-t to-220f g d s tube note: pin assignment: g: gate d: drain s: source
13n40 preliminary power mosfet unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r502-687.a ? absolute maximum ratings (t c =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 400 v gate-source voltage v gss 30 v drain current continuous (t c =25c) i d 13 a pulsed (note 2) i dm 52 a avalanche energy single pulsed (note 3) e as 705 mj power dissipation p d 48 w junction temperature t j +150 c storage temperature range t stg -55~+150 c note: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating: pulse width lim ited by maximum junction temperature 3. l = 8.34mh, i as = 13a, v dd = 50v, r g = 25 ? ,starting t j = 25c ? thermal data parameter symbol ratings unit junction to ambient ja 60 c/w junction to case jc 2.58 c/w ? electrical characteristics (t c =25c, unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 400 v drain-source leakage current i dss v ds =400v, v gs =0v 1 a gate- source leakage current forward i gss v gs =+30v, v ds =0v +100 na reverse v gs =-30v, v ds =0v -100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 2.0 4.0 v static drain-source on-state resistance r ds ( on ) v gs =10v, i d =6.5a 0.35 ? dynamic parameters input capacitance c iss v gs =0v, v ds =25v, f=1.0mhz 1283 pf output capacitance c oss 218 pf reverse transfer capacitance c rss 120 pf switching parameters turn-on delay time t d ( on ) v dd =200v, i d =13a, r g =25 ? (note 1, 2) 16 ns rise time t r 20 ns turn-off delay time t d ( off ) 100 ns fall-time t f 42 ns total gate charge q g v ds =320 v, i d =13a, v gs =10 v (note 1,2) 79 100 nc gate-source charge q gs 7.2 12 nc gate-drain charge q gd 43 55 nc source- drain diode ratings and characteristics drain-source diode forward voltage v sd i s =13a, v gs =0v 1.2 v maximum body-diode continuous current i s 13 a maximum body-diode pulsed current i sm 52 a notes: 1. pulse test: pulse width 300s, duty cycle 2% 2. essentially independent of operating temperature
13n40 preliminary power mosfet unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r502-687.a ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test - + peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period peak diode recovery dv/dt waveforms
13n40 preliminary power mosfet unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r502-687.a ? test circuits and waveforms (cont.) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. v ds 90% 10% v gs t d(on) t r t d(off) t f switching test circuit switching waveforms unclamped inductive switching test circuit unclamped inductive switching waveforms
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